PERFORMANCE ANALYSIS OF COPPER ZINC TIN SULFIDE, Cu2ZnSnS4 (CZTS) WITH VARIOUS BUFFER LAYERS BY USING SCAPS IN SOLAR CELLS

Abstract

Numerical modeling has become an essential tool for scientists and engineers as it enhances the ability to understand certain device properties and several processes that occur in solar cell operation. The performance of CZTS thin film based solar cell was investigated with the aid of a simulation program called Solar Cell Capacitance Simulator (SCAPS 1-D) while varying the thickness of the absorber layer. CZTS semiconductors serves as the absorber layer in the cell structure, Al:ZnO/ZnO was utilized as the front contact and CdS/In₂S₃/ZnSe/SnS₂/ as the window layer. Observation shows that ZnSe produced the most efficient cell of 13.79% (with Voc = 0.7289V, Jsc = 22.77mA/cm², FF= 83.12%). Also, Temperature, carrier concentration and thickness of layers all play an important role in performance of the cell.