Investigation Of GaAs MIS Deposited By PECVD Method

Résumé

Plasma-enhanced chemical vapor deposition of silicon nitride Si3N4 is commonly used to passivate surface states and to encapsulate III-V devices and circuits; this method has been used for Metal-oxide-semiconductor (MIS) capacitors in the GaAs semiconductor to improve the device. In this work, measurements are performed to obtain capacitance voltage (C–V) and conductance (G–V), measurements have been carried out in the frequency range of 10 kHz–1MHz and bias voltage range of (−6V) to (14V) at room temperature. Using the Terman method, the interface trap density is extracted from C–V curves. The Dit is responsible for the non-ideal behavior of C-Vg and G-Vg leading to the breakdown of such device.