The zinc oxide (ZnO) thin films were deposited onto the glass substrates by a novel chemical method, which is based on the alternate dipping of substrate in an alkaline zinc with ammonia formed zinc ammonia complex ([Zn(NH3)4]²⁺) solution and double-distilled water containing H₂O₂ (1%) at room temperature. The time duration for which the substrate is dipped in the precursor solution, plays an important role and it has been shown in this work that the time period for which a substrate is dipped in dilute H₂O₂ solution, which we referred as reaction period, affects significantly on the structural, surface morphological and optical properties. The as-deposited films were annealed at 300 and 400°C for 1h in air to improve the quality of the films. The as prepared nanostructured seed layer was characterized by X- ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that the films are covered well with glass substrates and have good polycrystalline structure and crystalline levels. The film thickness effect on band gap values was investigated and band gap values were found to be within the range of 3.8 – 3.2 eV.