Moroccan Journal of Condensed Matter, Vol 13, No 1 (2011)

Strain and potential fluctuations effects on (In,Ga)N/(Al,Ga)N/GaN Electroluminescence red shift

Haddou EL Ghazi, Izeddine Zorkani, Anouar Jorio

Abstract


Theoretical calculations of potential fluctuations and strain effects are investigated in this paper. Good agreement between the suggested effects and the luminescence bands red shift, observed experimentally forĀ formule_205 double heterostructure grown on SIC substrate, which shows that the model is simple and more consistent with the experimental results.