Amorphous carbon nitride thin films were deposited, at room temperature, on silicon substrates by reactive radiofrequency (RF) sputtering from a graphite target in an atmosphere of nitrogen. The structural properties were investigated by Raman spectroscopy. This spectroscopy reveals the presence of C–C, C=C, C=N and C≡N bonding types. The Raman intensity (ID/IG) ratio of disorder and graphitic bands increased from 1.29 to 2.67 with increasing the RF power from 100 to 400W indicating an increase of structural disorder.