The study concerns the analysis of residual stress in thin films obtained by IBAD (Ion Beam Assisted Deposition). Only the thermal stress in the film can be calculated and it has no other information on other types of constraints. Kamminga and Al have proposed a model in which they describe the stress state as a combination of a hydrostatic stress caused by the introduction of particles into the holes of the matrix of the film and a fixing constraint to keep the lateral dimensions of the film identical to those of the substrate. We apply this model to determine the stresses in the films of yttrium deposited by IBS of Si substrates, SrTiO₃ and MgO. New phosphonated cross-linked materials were synthesized from telomers obtained by reaction between 10-undecenol and dialkyl hydrogenphosphonates. Telomers were then converted to materials resins by methacrylation reactions. Finally, photopolymerization of the different materials synthesized was achieved and influence of the nature of the phosphonate group (diester, monoacid and diacid) was also evaluated.