This study deals with n+pp+ type crystalline silicon solar cells performances using the Taguchi method in its optimum.We; then, discuss physical parameters influence on efficiency solar cell, and also, we determine photovoltaic parameters of our structure by numeric simulation (PC1D). Most previous work has used relatively low wafer resistivities (0.1-0.5Ωcm). The modeling in this work showed that high efficiencies could also be achieved with 1.0 Ωcm in the p-region and the flexibility in front junction depth and back junction depth. Key words: Taguchi methodology, numeric simulation (PC1D), solar cells, silicon, wafer resistivities, n+pp+ structure, front junction depth, back junction depth, conversion efficiency.