Porous silicon (PS) is obtained by anodic attack of single-crystal silicon in concentrated hydrofluoric acid solution. All the properties of the porous silicon layer, such as porosity, the thickness and the diameter of the pores depend in a critical way of the anodization parameters.

This present work aims to study the evolution of the porous silicon various properties according to the anodization parameters. Also we are interested in the various experimental aspects intervening in manufacture and the characterization of the thin layers of porous silicon by gravimetry and ellipsometry.