Technique CV exploits measurement in mode of small signals for a relatively high frequency of the capacity of a junction metal-semi driver or a junction P⁺ NR (or PN⁺ polarized in reverse by a tension V R The experimental analysis of this technique makes it possible to determine some electric properties of the junctions P+ N or Schottky.

We describe here, the method used and we expose then the results obtained by this technique on diodes containing silicon (Si).