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MOCVD growth of Bi2Te3-Sb2Te3 layers : Effect of growth parameters on the electrical and thermoelectrical properties


 
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1. Title Title of document MOCVD growth of Bi2Te3-Sb2Te3 layers : Effect of growth parameters on the electrical and thermoelectrical properties
 
2. Creator Author's name, affiliation, country B. Aboulfarah; Université M ed V Agdal, Faculté des Sciences, Département de Physique, Laboratoire de Physique des Matériaux, Rabat; Morocco
 
2. Creator Author's name, affiliation, country D. Sayah; Université M ed V Agdal, Faculté des Sciences, Département de Physique, Laboratoire de Physique des Matériaux, Rabat; Morocco
 
2. Creator Author's name, affiliation, country A. Mzerd; Université M ed V Agdal, Faculté des Sciences, Département de Physique, Laboratoire de Physique des Matériaux, Rabat; Morocco
 
2. Creator Author's name, affiliation, country A. Giani; Centre d'Electronique et de Micro-Optoélectronique de Montpellier (CEM2), UM II, UMR 5507 CNRS, Place E. Bataillon, 34095 Montpellier cédex 05; France
 
2. Creator Author's name, affiliation, country A. Boyer; Centre d'Electronique et de Micro-Optoélectronique de Montpellier (CEM2), UM II, UMR 5507 CNRS, Place E. Bataillon, 34095 Montpellier cédex 05; France
 
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4. Description Abstract

The growth of (Bi1-xSbx)2Te3 thin films by metal-organic chemical vapour deposition (MOCVD) using trimethylbismuth, triethylantimony and diethyltellurium as bismuth, antimony and tellurium sources respectively is investigated on pyrex substrates. The electrical and thermoelectrical properties of this material are also measured over the growth temperature range 360-470°C. The studies are also made on the effect of VI/V ratio on these properties in the variation range 2-9. Polycrystalline structure is confirmed by X-ray diffraction, and it is observed that the intensity of the preferred orientation is higher at 450°C. The measurement of Seebeck coefficient shows that all samples have p-type conduction. The best value of this parameter is obtained for high growth temperature (240µV/K). The good result obtained for (Bi1-xSbx)2Te3 thin films revealed the great potential of MOCVD method which is an industrial technique to produce good materials for device applications (sensors and thermopiles).
 
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7. Date (YYYY-MM-DD) 09-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/67
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 3 (2000)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)