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PKP Metadata Items |
Metadata for this Document |
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| 1. |
Title |
Title of document |
Modeling of Fowler-Nordheim current of metal/ ultra-thin oxide/ semiconductor structures |
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| 2. |
Creator |
Author's name, affiliation, country |
Y. Khlifi; Laboratoire d’Electronique Appliquée et d’Automatique (LEAA), Université Mohamed Ier, Faculté des Sciences, Dépt de Physique, Oujda
Laboratoire de Physique du Solide (LPS), Université Mohamed I er ,Faculté des Sciences, Dépt de Physique, Oujda; Morocco |
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| 2. |
Creator |
Author's name, affiliation, country |
K. Kassmi; Laboratoire d’Electronique Appliquée et d’Automatique (LEAA), Université Mohamed Ier, Faculté des Sciences, Dépt de Physique, Oujda; Morocco |
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| 2. |
Creator |
Author's name, affiliation, country |
L. Roubi; Laboratoire de Physique du Solide (LPS), Université Mohamed I er ,Faculté des Sciences, Dépt de Physique, Oujda; Morocco |
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| 2. |
Creator |
Author's name, affiliation, country |
R. Maimouni; Laboratoire d’Electronique Appliquée et d’Automatique (LEAA), Université Mohamed Ier, Faculté des Sciences, Dépt de Physique, Oujda; Morocco |
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Subject |
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Subject |
Keyword(s) |
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| 4. |
Description |
Abstract |
In this paper we present results of a modeling of the current-voltage characteristics of metal/ultra-thin oxide/semiconductor structures with negatively biased metal gate (V<0), when the oxide thickness varies from 45Å to 80Å. We analyze the theoretical influence of the temperature and Schottky effect on the Fowler-Nordheim (FN) conduction. The results obtained show that these influences depend on the electric field in the oxide and on the potential barrier at the metal/oxide interface. At the ambient temperature, the influence on this potential barrier is lower than 1.5%. However, it can reach 45% on the pre-exponential coefficient of the FN current. It is therefore necessary to consider in the FN classical conduction expression a correction term that takes account the temperature and Schottky effects. These results are validated experimentally by modeling the current-voltage characteristics of the realized structures at high field. |
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Publisher |
Organizing agency, location |
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Contributor |
Sponsor(s) |
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| 7. |
Date |
(YYYY-MM-DD) |
09-03-2011
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Type |
Status & genre |
Peer-reviewed Article |
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| 8. |
Type |
Type |
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| 9. |
Format |
File format |
PDF |
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| 10. |
Identifier |
Uniform Resource Identifier |
https://revues.imist.ma/index.php/MJCM/article/view/63 |
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| 11. |
Source |
Title; vol., no. (year) |
Moroccan Journal of Condensed Matter; Vol 3 (2000) |
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Language |
English=en |
en |
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Relation |
Supp. Files |
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Coverage |
Geo-spatial location, chronological period, research sample (gender, age, etc.) |
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Rights |
Copyright and permissions |
Copyright (c)
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