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CuInSe₂ thin films have been grown on Corning glass and Si (100) substrates using stacked elemental layers (SEL) processing. The influence of substrate’s nature and substrate’s temperature were studied. X-ray diffraction and SEM measurements have shown that the films exhibit an excellent crystallinity and crystallize in a tetragonal structure. Scanning electron microscopy investigations have shown that the films consist in a structure with large grains in the range 80 – 200 nm. Increasing the deposition temperature from room temperature to 300 °C has lead to a change in the composition and morphology of the films. Characteristic peaks of the chalcopyrite structure such as (101), (211) and (311) were clearly observed for both layers upon annealing at 450°C as evidenced by X-ray diffraction study. The determined lattice parameters were a = 0.57725 (6) nm, b = 1.1621 (2) nm for sample prepared at room temperature and a = 0.57770 (4) nm, b = 1.1602 (1) nm for Ts = 300°C. The crystallographic structure of the CuInSe₂ sample was analyzed by Rietveld analysis using X-ray powder diffraction data. UV-Vis-NIR Spectrophotometry was used to investigate the optical characteristics of different Cu/In/Se/Se thin layers in the spectral range between 300 – 2000 nm. The optical band-gap of our materials increases from 0.98 to 1.01 eV.