MJCM Reading Tools

We report here transport properties measurements and theoretical results on modeling carrier charge mobility in Hg _1-xCd_xTe (x =0.22). Conductivity and Hall Effect were measured in the temperature range 4.2 - 300 K. Our measurements indicate that the sample is n-type semiconductor. In intrinsic regime, the slope of the curve R_H T^3/2 indicates a gap of 178 meV which agree well with E_g (x = 0.22, 300 K) = 183 meV. Our theoretical calculations, according to the Kane model, show that the Fermi energy E_F increases with temperature. The calculated donor state E_d is 3 meV above the conduction band at 4.2 K and agrees well with 0.67 meV of low field Hall effect measurements. Our theoretical calculations on the mobility shows that ionized impurity scattering dominate below 25 K, optical phonons scattering at high temperatures (>70K) and the mobility is generated by the both mechanisms of scattering in the intermediate temperature regime. At high temperatures, an excellent agreement between experimental and calculated scattering mobility is obtained by introducing a trial function. The detection wave length  situates the sample as medium-infrared detector.