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Contribution of weak localization and electron-electron interaction, in corrective term “mT1/2” of the metallic conductivity in n-type SiAs


 
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1. Title Title of document Contribution of weak localization and electron-electron interaction, in corrective term “mT1/2” of the metallic conductivity in n-type SiAs
 
2. Creator Author's name, affiliation, country Abdelghani Sybous; Research Group in ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir; Morocco
 
2. Creator Author's name, affiliation, country Abdelhamid El kaaouachi; Research Group in ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir; Morocco
 
2. Creator Author's name, affiliation, country Abdelfattah Narjis; Research Group in ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir; Morocco
 
2. Creator Author's name, affiliation, country Lhoussine Limouny; Research Group in ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir; Morocco
 
2. Creator Author's name, affiliation, country Said Dlimi; Research Group in ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir; Morocco
 
2. Creator Author's name, affiliation, country Bruno Capoen; C E R L A - FR CNRS 2416, Université des Sciences et Technologies de LilleI 59 655 Villeneuve d'Ascq Cedex; France
 
2. Creator Author's name, affiliation, country Jamal Hemine; Laboratoire de Physique de la Matière Condensée, Faculté des Sciences et Techniques de Mohammadia, Département de Physique, Mohammadia; Morocco
 
2. Creator Author's name, affiliation, country Rachid Abdia; Research Group in ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir; Morocco
 
2. Creator Author's name, affiliation, country Gerard Biskupski; Laboratoire de Spectroscopie Hertzienne ,LSH équipe des semi-conducteurs, Bâtiment P5, Université des Sciences et Technologies de LilleI 59 655 Villeneuve d'Ascq Cedex; France
 
3. Subject Discipline(s)
 
3. Subject Keyword(s) SiAs semiconductor, low temperature, impurity concentration, metal-insulator transition, electron-electron interaction effect, weak localization effect.
 
4. Description Abstract

We present measurements of the electrical conductivity of barely metallic n-type SiAs that are driven to the metal-insulator transition (MIT) by impurity concentration. The experiments were carried out at low temperature in the range (3.48 - 0.00044 K) and with impurity concentrations up to . On the metallic side of the MIT, the electrical conductivity is found to behave likedown to 0.44 mK. Physical explanation to the temperature dependence of the conductivity is given in metallic side of the MIT using a competition between two effects involved in the mechanisms of conduction, like electron-electron interaction effect, and weak localization effect.
 
5. Publisher Organizing agency, location
 
6. Contributor Sponsor(s)
 
7. Date (YYYY-MM-DD) 12-01-2012
 
8. Type Status & genre Peer-reviewed Article
 
8. Type Type
 
9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/470
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 13, No 2 (2011)
 
12. Language English=en en
 
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14. Coverage Geo-spatial location, chronological period, research sample (gender, age, etc.)
 
15. Rights Copyright and permissions Copyright (c)