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Analysis of parameters affecting the flicker noise in a two-dimensional electron gas in an AlGaAs/GaAs heterostructure


 
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1. Title Title of document Analysis of parameters affecting the flicker noise in a two-dimensional electron gas in an AlGaAs/GaAs heterostructure
 
2. Creator Author's name, affiliation, country S. Mouetsi; Département Sciences et Technologies, Faculté des Sciences et Technologies, Université Larbi Ben M’hidi, Oum El Bouaghi; Algeria
 
3. Subject Discipline(s)
 
3. Subject Keyword(s) AlGaAs/GaAs, two-dimensional electron gaz (2DEG), low frequency noise, flicker noise
 
4. Description Abstract

We studied the effect of the most important parameters affecting noise at low frequency in a bi-dimensional electron gas at different temperatures from 300 K down to 4 K, and at two bias voltages (20 and 50 mV). The flicker noise (or 1/f noise) is characterized by the well known Hooge’s expression, and parameters are analyzed; γ increases with the sample length to reach saturation, while αH presents a linear increase. They also increase with temperature; γ varies linearly independently of the bias, and αH varies as ~exp(T/T0) depending on the applied bias. The flicker noise origin is identified as being the carrier mobility fluctuation which is likely dominated by the lattice phonons.
 
5. Publisher Organizing agency, location
 
6. Contributor Sponsor(s)
 
7. Date (YYYY-MM-DD) 12-01-2012
 
8. Type Status & genre Peer-reviewed Article
 
8. Type Type
 
9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/468
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 13, No 2 (2011)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)