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Strain and potential fluctuations effects on (In,Ga)N/(Al,Ga)N/GaN Electroluminescence red shift


 
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1. Title Title of document Strain and potential fluctuations effects on (In,Ga)N/(Al,Ga)N/GaN Electroluminescence red shift
 
2. Creator Author's name, affiliation, country Haddou EL Ghazi; Solid state physic laboratory, Faculty of sciences, Dhar El Mahrez, B.P. 1796 Fes-Atlas Mathématiques spéciales, CPGE Taza, 35000; Morocco
 
2. Creator Author's name, affiliation, country Izeddine Zorkani; Solid state physic laboratory, Faculty of sciences, Dhar El Mahrez, B.P. 1796 Fes-Atlas; Morocco
 
2. Creator Author's name, affiliation, country Anouar Jorio; Solid state physic laboratory, Faculty of sciences, Dhar El Mahrez, B.P. 1796 Fes-Atlas Regional center of interface, Sidi mohammed Ben Abdellah University, Fes; Morocco
 
3. Subject Discipline(s) 78.20.Bh-78.60.Fi
 
3. Subject Keyword(s) Potential fluctuations, Strain, Electroluminescence, (In,Ga)N heterostructure.
 
4. Description Abstract

Theoretical calculations of potential fluctuations and strain effects are investigated in this paper. Good agreement between the suggested effects and the luminescence bands red shift, observed experimentally for formule_205 double heterostructure grown on SIC substrate, which shows that the model is simple and more consistent with the experimental results.

 
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6. Contributor Sponsor(s)
 
7. Date (YYYY-MM-DD) 19-12-2011
 
8. Type Status & genre Peer-reviewed Article
 
8. Type Type
 
9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/448
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 13, No 1 (2011)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)