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Properties of Cd1-xZnx Te crystals grown by High Pressure Bridgman (HPB)


 
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1. Title Title of document Properties of Cd1-xZnx Te crystals grown by High Pressure Bridgman (HPB)
 
2. Creator Author's name, affiliation, country A. Drighil; L.P.S.C.M., Université Hassan II-Mohammedia faculté des Sciences Ben M’sik Département de Physique Casablanca; Morocco
 
2. Creator Author's name, affiliation, country R. Adhiri; L.P.S.C.M., Université Hassan II-Mohammedia faculté des Sciences Ben M’sik Département de Physique Casablanca; Morocco
 
2. Creator Author's name, affiliation, country C. Sribi; L.P.S.C.M., Université Hassan II-Mohammedia faculté des Sciences Ben M’sik Département de Physique Casablanca; Morocco
 
2. Creator Author's name, affiliation, country M. Mousstad; L.P.S.C.M., Université Hassan II-Mohammedia faculté des Sciences Ben M’sik Département de Physique Casablanca; Morocco
 
2. Creator Author's name, affiliation, country K. Cherkaoui; L.P.M., INSA Lyon, 20, Av. Albert Einstein, F 69621 Villeurbanne; France
 
2. Creator Author's name, affiliation, country G. Marrakchi; L.P.M., INSA Lyon, 20, Av. Albert Einstein, F 69621 Villeurbanne; France
 
2. Creator Author's name, affiliation, country A. Zerrai; L.P.M., INSA Lyon, 20, Av. Albert Einstein, F 69621 Villeurbanne; France
 
2. Creator Author's name, affiliation, country M. Zazoui; L.P.M.C., Université Hassan II-Mahammadia Faculté des Sciences et Techniques Mohammadia . Département de Physique Mohammadia; Morocco
 
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4. Description Abstract In this paper we present results of a modelling of the current-voltage characteristics of metal/ultra-thin oxide/semiconductor structures with negatively biased metal gate (V<0), when the oxide thickness varies from 45Å to 80Å. We analyze the theoretical influence of the temperature and Schottky effect on the Fowler-Nordheim (FN) conduction. The results obtained show that these influences depend on the electric field in the oxide and on the potential barrier at the metal/oxide interface. At the ambient temperature, the influence on this potential barrier is lower than 1.5%. However, it can reach 45% on the pre-exponential coefficient of the FN current. It is therefore necessary to consider in the FN classical conduction expression a correction term that takes account the temperature and Schottky effects. These results are validated experimentally by modelling the current-voltage characteristics of the realized structures at high field.
 
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6. Contributor Sponsor(s)
 
7. Date (YYYY-MM-DD) 07-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
8. Type Type
 
9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/34
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 2 (1999)
 
12. Language English=en en
 
13. Relation Supp. Files
 
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15. Rights Copyright and permissions Copyright (c)