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Resonant states in GaAs/Ga1-xAlxAs Multi-Quantum-Wells


 
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1. Title Title of document Resonant states in GaAs/Ga1-xAlxAs Multi-Quantum-Wells
 
2. Creator Author's name, affiliation, country M. Hammouchi; Laboratoire de Dynamique et d’Optique des Matériaux, Département de Physique, Faculté des Sciences, Université Mohamed Premier, Oujda; Morocco
 
2. Creator Author's name, affiliation, country A. Bousfia; Laboratoire de Dynamique et d’Optique des Matériaux, Département de Physique, Faculté des Sciences, Université Mohamed Premier, Oujda; Morocco
 
2. Creator Author's name, affiliation, country E. H. El Boudouti; Laboratoire de Dynamique et d’Optique des Matériaux, Département de Physique, Faculté des Sciences, Université Mohamed Premier, Oujda; Morocco
 
2. Creator Author's name, affiliation, country A. Nougaoui; Laboratoire de Dynamique et d’Optique des Matériaux, Département de Physique, Faculté des Sciences, Université Mohamed Premier, Oujda; Morocco
 
2. Creator Author's name, affiliation, country B. Djafari-Rouhani; Laboratoire de Dynamique et Structure des Matériaux Moléculaires, U.R.A. CNRS 801, UFR de Physique, Université de Lille 1, 59 655 Villeneuve d’Ascq; France
 
2. Creator Author's name, affiliation, country M.L.H. Lahlaouti; Laboratoire de Dynamique et Structure des Matériaux Moléculaires, U.R.A. CNRS 801, UFR de Physique, Université de Lille 1, 59 655 Villeneuve d’Ascq; France
 
2. Creator Author's name, affiliation, country A. Akjouj; Laboratoire de Dynamique et Structure des Matériaux Moléculaires, U.R.A. CNRS 801, UFR de Physique, Université de Lille 1, 59 655 Villeneuve d’Ascq; France
 
2. Creator Author's name, affiliation, country L. Dobrzynski; Laboratoire de Dynamique et Structure des Matériaux Moléculaires, U.R.A. CNRS 801, UFR de Physique, Université de Lille 1, 59 655 Villeneuve d’Ascq; France
 
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4. Description Abstract The effect of buffer layers on resonant states in a Multi-Quantum-Well (MQW) sandwiched between two substrates is investigated here theoretically. These resonances appear as well-defined peaks in the density of states (DOS). The local and total densities of states are obtained from an analytical determination of the Green functions. Due to the substrate/buffer layer/ MQW /substrate interaction, different kinds of resonant states are found and their properties are investigated. We show in particular that an incident electron in the left-hand side substrate is transmitted in the right hand side substrate of the structure with large time delays in the phase time. The peaks in the phase time associated with the transmission coefficient are found to be similar to those corresponding to the DOS. The intensity of these peaks associated with extended states in MQW’s and Tamm like states lying at the MQW/buffer layer interface, strongly depends on the width of the buffer layer.
 
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7. Date (YYYY-MM-DD) 07-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/32
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 2 (1999)
 
12. Language English=en en
 
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