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Impact Of The Effective Conducting Path Effect (ECPE) On The Convergence Of The Evanescent And The Polynomial Models: Applied To The Submicronic MOSFET


 
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1. Title Title of document Impact Of The Effective Conducting Path Effect (ECPE) On The Convergence Of The Evanescent And The Polynomial Models: Applied To The Submicronic MOSFET
 
2. Creator Author's name, affiliation, country A. Bouziane; Laboratoire de physique de la matière et nanotechnologie, Faculté des Sciences et Techniques, Université Sultan Moulay Slimane, BP523 Beni-Mellal, CP23000; Morocco
 
2. Creator Author's name, affiliation, country A. Aouaj; Laboratoire de physique de la matière et nanotechnologie, Faculté des Sciences et Techniques, Université Sultan Moulay Slimane, BP523 Beni-Mellal, CP23000; Morocco
 
2. Creator Author's name, affiliation, country A. Nouaçry; Laboratoire de physique de la matière et nanotechnologie, Faculté des Sciences et Techniques, Université Sultan Moulay Slimane, BP523 Beni-Mellal, CP23000; Morocco
 
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4. Description Abstract We present a comparative study of submicronic MOSFET characteristics using analytic models of electrostatic potential in the channel. We are particularly interested in the surface potential, threshold voltage, swing and DIBL using the polynomial model with and without ECPE and the evanescent model to analytically express the electrostatic potential. The results show a good agreement between the polynomial model including ECPE, the evanescent model and measures done by simulation tools.
 
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7. Date (YYYY-MM-DD) 21-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/282
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 12, No 3 (2010)
 
12. Language English=en en
 
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