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RF Power Effect On Structural Characteristics Of Amorphous Carbon Nitride Thin Films Deposited By Reactive Radiofrequency Sputtering


 
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1. Title Title of document RF Power Effect On Structural Characteristics Of Amorphous Carbon Nitride Thin Films Deposited By Reactive Radiofrequency Sputtering
 
2. Creator Author's name, affiliation, country A. Essafti; Laboratoire de Physique des Solides et des Couches Minces, Département de Physique, Faculté des Sciences – Semlalia –, Université Cadi Ayyad, B.P. 2390, 40000 Marrakech; Morocco
 
2. Creator Author's name, affiliation, country J.L.G. Fierro; ICP, CSIC, Campus Universidad Autónoma de Madrid; Spain
 
2. Creator Author's name, affiliation, country E. Ech-chamikh; Laboratoire de Physique des Solides et des Couches Minces, Département de Physique, Faculté des Sciences – Semlalia –, Université Cadi Ayyad, B.P. 2390, 40000 Marrakech; Morocco
 
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4. Description Abstract Amorphous carbon nitride thin films were deposited, at room temperature, on silicon substrates by reactive radiofrequency (RF) sputtering from a graphite target in an atmosphere of nitrogen. The structural properties were investigated by Raman spectroscopy. This spectroscopy reveals the presence of C–C, C=C, C=N and C≡N bonding types. The Raman intensity (ID/IG) ratio of disorder and graphitic bands increased from 1.29 to 2.67 with increasing the RF power from 100 to 400W indicating an increase of structural disorder.
 
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7. Date (YYYY-MM-DD) 21-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/280
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 12, No 3 (2010)
 
12. Language English=en en
 
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