TEM study of GaN/AlN quantum dots deposited on vicinal silicon
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| 1. | Title | Title of document | TEM study of GaN/AlN quantum dots deposited on vicinal silicon |
| 2. | Creator | Author's name, affiliation, country | M. Benaissa; CNRST, Angle Allal Fassi / FAR, B.P. 8027 N.U. Hay Riad, 10000 Rabat; Morocco |
| 2. | Creator | Author's name, affiliation, country | P. Vennéguès; CRHEA-CNRS, rue Bernard Grégory, 06560 Valbonne; France |
| 2. | Creator | Author's name, affiliation, country | F. Semond; CRHEA-CNRS, rue Bernard Grégory, 06560 Valbonne; France |
| 3. | Subject | Discipline(s) | |
| 3. | Subject | Keyword(s) | |
| 4. | Description | Abstract | Transmission electron microscopy was performed to investigate the use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the (111) direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots. The microstructure of different QD encountered in the GaN/AlN system is also described. |
| 5. | Publisher | Organizing agency, location | |
| 6. | Contributor | Sponsor(s) | |
| 7. | Date | (YYYY-MM-DD) | 17-03-2011 |
| 8. | Type | Status & genre | Peer-reviewed Article |
| 8. | Type | Type | |
| 9. | Format | File format | |
| 10. | Identifier | Uniform Resource Identifier | https://revues.imist.ma/index.php/MJCM/article/view/226 |
| 11. | Source | Title; vol., no. (year) | Moroccan Journal of Condensed Matter; Vol 11, No 2 (2009): First Moroccan Days of Nanoscience Nanotechnology |
| 12. | Language | English=en | en |
| 13. | Relation | Supp. Files | |
| 14. | Coverage | Geo-spatial location, chronological period, research sample (gender, age, etc.) | |
| 15. | Rights | Copyright and permissions |
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