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Analysis of temperature effect on I-V characteristics of silicon (npn) emitter-base


 
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1. Title Title of document Analysis of temperature effect on I-V characteristics of silicon (npn) emitter-base
 
2. Creator Author's name, affiliation, country Haddou EL Ghazi; Solid State Physic Laboratory, Faculty of Sciences, Dhar El Mehraz, Fez; Morocco
 
2. Creator Author's name, affiliation, country Anouar Jorio; Solid State Physic Laboratory, Faculty of Sciences, Dhar El Mehraz, Fez Regional center of interface, Sidi Mohammed Ben Abdellah University; Morocco
 
2. Creator Author's name, affiliation, country Izeddine Zorkani; Solid State Physic Laboratory, Faculty of Sciences, Dhar El Mehraz, Fez; Morocco
 
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4. Description Abstract The current through silicon emitter-base (npn) junctions is measured for forward and reverse polarizations. The I-V characteristics are presented for unirradiated samples at different temperatures. For forward bias, we have studied the reverse saturation current (IS), the series resistance (RS) and the ideality factor (n) as function of temperature. The temperature effect is more consistent with the generation current from the space charge region. For reverse polarization, we have studied Ln (IR/T1/2) as function of the reciprocal temperature and we found 0.29 eV for the activation energy which is in good agreement with the result obtained from electroluminescence (EL) spectra.
 
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7. Date (YYYY-MM-DD) 17-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/222
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 11, No 2 (2009): First Moroccan Days of Nanoscience Nanotechnology
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)