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owards a new kind of component: Superconductor Single Electron Transistor SSET


 
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1. Title Title of document owards a new kind of component: Superconductor Single Electron Transistor SSET
 
2. Creator Author's name, affiliation, country M. Boujida; University of Sidi Mohammed Ben Abdullah Faculty of Science and Techniques Laboratory of Signals Systems and Components Electrical Engineering School, Route Immouzer BP 2202 Fès; Morocco
 
2. Creator Author's name, affiliation, country A. Mansouri; University of Sidi Mohammed Ben Abdullah Faculty of Science and Techniques Laboratory of Signals Systems and Components Electrical Engineering School, Route Immouzer BP 2202 Fès; Morocco
 
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4. Description Abstract

Single-electron transistors (SETs) are used to perform sensitive charge measurements and are widely discussed as possible components of dense integrated circuit. An exact model for a single-electron transistor (SET) was developed [1] early, within the circuit simulation package SPICE; it's constituted by two tunnel junctions, with two gates coupled to the island. We will present here a description of previews results of SET [1] and our perspective for a superconductor single electron transistor.
Superconducting single-electron transistors (SSET's) are small islands of superconducting material isolated from an external circuit by tunnel barriers (Josephson junctions). The normal tunnel barrier resistances: R >RQ= h / 4e2≈ 6.5 KΩ are sufficient to constrain the excess charge on the island to integer multiples of e.

 
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7. Date (YYYY-MM-DD) 17-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/220
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 11, No 2 (2009): First Moroccan Days of Nanoscience Nanotechnology
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)