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Taguchi methodology for the optimization of n+pp+ type silicon solar photovoltaic conversion efficiency


 
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1. Title Title of document Taguchi methodology for the optimization of n+pp+ type silicon solar photovoltaic conversion efficiency
 
2. Creator Author's name, affiliation, country A. Habbou; Laboratory of Material Physics and Applications of the Renewable Energies, FST of Mohammedia BP 146, 20630 Mohammedia; Morocco
 
2. Creator Author's name, affiliation, country H. Chaffoui; Laboratory of Material Physics and Applications of the Renewable Energies, FST of Mohammedia BP 146, 20630 Mohammedia; Morocco
 
2. Creator Author's name, affiliation, country B. Hartiti; Laboratory of Material Physics and Applications of the Renewable Energies, FST of Mohammedia BP 146, 20630 Mohammedia; Morocco
 
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4. Description Abstract This study deals with n+pp+ type crystalline silicon solar cells performances using the Taguchi method in its optimum.We; then, discuss physical parameters influence on efficiency solar cell, and also, we determine photovoltaic parameters of our structure by numeric simulation (PC1D). Most previous work has used relatively low wafer resistivities (0.1-0.5Ωcm). The modeling in this work showed that high efficiencies could also be achieved with 1.0 Ωcm in the p-region and the flexibility in front junction depth and back junction depth. Key words: Taguchi methodology, numeric simulation (PC1D), solar cells, silicon, wafer resistivities, n+pp+ structure, front junction depth, back junction depth, conversion efficiency.
 
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7. Date (YYYY-MM-DD) 17-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/200
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 9 (2007)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)