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Growth and characterization of Sb2Te3 thin films prepared by MOCVD technique in horizontal reactor


 
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1. Title Title of document Growth and characterization of Sb2Te3 thin films prepared by MOCVD technique in horizontal reactor
 
2. Creator Author's name, affiliation, country B. Aboulfarah; Université MedV Agdal, Faculté des Sciences, Département de Physique, Laboratoire de Physique des matériaux. Rabat; Morocco
 
2. Creator Author's name, affiliation, country A. Mzerd; Université MedV Agdal, Faculté des Sciences, Département de Physique, Laboratoire de Physique des matériaux. Rabat; Morocco
 
2. Creator Author's name, affiliation, country A. Boulouz; Centre d'Electronique de Montpellier, CEM2, UMII Place E.Bataillon, 34095 Montpellier cedex 05; France
 
2. Creator Author's name, affiliation, country A. Giani; Centre d'Electronique de Montpellier, CEM2, UMII Place E.Bataillon, 34095 Montpellier cedex 05; France
 
2. Creator Author's name, affiliation, country A. Foucaran; Centre d'Electronique de Montpellier, CEM2, UMII Place E.Bataillon, 34095 Montpellier cedex 05; France
 
2. Creator Author's name, affiliation, country A. Boyer; Centre d'Electronique de Montpellier, CEM2, UMII Place E.Bataillon, 34095 Montpellier cedex 05; France
 
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4. Description Abstract In this paper the electrical and thermoelectrical performances of p-type Sb2Te3, elaborated by metal organic chemical vapour deposition (MOCVD) in horizontal quartz reactor on pyrex glass substrate arc discussed. The quality of the deposited layers is controlled by X-ray diffraction, Scanning Elecrtron Microscope (SEM), Energy dispersive X-ray spectroscopy (EDX), and Hall effect. The deposition optimal conditions are: substrate temperature equal to 450°C, the pressure ratio R= VI/V is varied from 1 to 13 and TESb partial pressure is about 1 x] 0.4 atm. It is found that the electrical properties of Sb2Te3, change remarkably with VI/V ratio and exhibited a polyerystalline structure. The measurement of the Seebeck coefficient (115µV/K) and the mobility (196cm2/V.s) leads us to confirm the significant potential of the OMCVD method to obtain a good material promising for thermoelectric applications.
 
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7. Date (YYYY-MM-DD) 07-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/19
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 1 (1998)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)