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Characterization of Hydrogen Plasma used for Introducing Hydrogen into Semiconductors


 
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1. Title Title of document Characterization of Hydrogen Plasma used for Introducing Hydrogen into Semiconductors
 
2. Creator Author's name, affiliation, country O. Meglali; Laboratoire des couches minces et interface, unité de recherche physique des matériaux et applications, Université Mentouri -Constantine; Algeria
 
2. Creator Author's name, affiliation, country M.S. Aida; Laboratoire des couches minces et interface, unité de recherche physique des matériaux et applications, Université Mentouri -Constantine; Algeria
 
2. Creator Author's name, affiliation, country N. Attaf; Laboratoire des couches minces et interface, unité de recherche physique des matériaux et applications, Université Mentouri -Constantine; Algeria
 
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4. Description Abstract

This paper reports the investigation result of RF power effects on the RF hydrogen plasma parameters. The hydrogen plasma parameters are measured experimentally in the center of the deposition chamber by means of the cylindrical Langmuir probe. The measurements are done at 0.2 mbar hydrogen gas pressures. The applied discharge powers are between 50 W and 200 W. It is found that the electron and ion densities increase with the RF power. The ion density dependence of the cathode sheath voltage is fitted to Ni(cm-3)=-3.5 1010 + 9.2  107 (Vo - Vdc). The plasma and floating potentials are less sensitive to RF power.
 
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7. Date (YYYY-MM-DD) 15-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/183
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 8 (2007)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)