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PKP Metadata Items |
Metadata for this Document |
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| 1. |
Title |
Title of document |
Optimal crystal growth conditions of thin films of Bi2Te3, Sb2Te3 semiconductors and their alloys BixSb2-xTe3. Applications to the thermal sensors |
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| 2. |
Creator |
Author's name, affiliation, country |
A. Mzerd; Med V University Agdal, Faculty of sciences -Rabat, Physics department, Material physics Laboratory, Rabat; Morocco |
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| 2. |
Creator |
Author's name, affiliation, country |
B. Aboulfarah; Med V University Agdal, Faculty of sciences -Rabat, Physics department, Material physics Laboratory, Rabat; Morocco |
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| 2. |
Creator |
Author's name, affiliation, country |
D. Sayah; Med V University Agdal, Faculty of sciences -Rabat, Physics department, Material physics Laboratory, Rabat; Morocco |
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| 2. |
Creator |
Author's name, affiliation, country |
F. Tchelieebou; Montpellier II University, Electronic and opto-electronic Center (CEM2) Montpellier; France |
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| 2. |
Creator |
Author's name, affiliation, country |
A. Sackda; Montpellier II University, Electronic and opto-electronic Center (CEM2) Montpellier; France |
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| 2. |
Creator |
Author's name, affiliation, country |
A. Boyer; Montpellier II University, Electronic and opto-electronic Center (CEM2) Montpellier; France |
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| 3. |
Subject |
Discipline(s) |
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Subject |
Keyword(s) |
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| 4. |
Description |
Abstract |
We have grown stoichiometrically thin films of the narrow band-gap semiconductor Bi2Te3 by molecular beam epitaxy in an ultra-high vacuum on single-crystal substrate Sb2Te3 prepared by Bridgman technique. The quality of deposited layers is controlled by X-ray diffraction, scanning electron microscope (SEM), secondary ion mass spectroscopy (SIMS) depth profiling and energy dispersive X-ray (EDX) microanalyser. It is observed that the stoichiometry of the deposited layers depended on substrate temperature and flux ratio. In addition all the deposited layers are single-crystal in the orientation of their substrates with a small shift due to the stress in layer. We have also studied the optimal growth conditions of Bi2Te3(n) and Sb2Te3(p) layers onto amorphous substrates and the thermoelectric properties of BixSb2..xTe3 alloys as a function of the bismuth concentration x. The optimal value of S (thermoelectrical power) is obtained at x=0.1. The improvement of S in comparison with that of Sb2Te3 results in the reduction in antisite defects or carrier compensation. Thermopile and pressure sensors based on Bi°. Sb1.9Te3 (p)- Bi2Te3 (n)] are constructed. These [p-n] active junctions constitute the sensitive elements of both the thermopiles and the vacuum gauges. In comparison with the (Bi-Sb) couple, an improvement in the sensitivity by factor 2.8 is achieved. Thermal simulation based on COSMOS/M software confirmed the experimental findings. |
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| 5. |
Publisher |
Organizing agency, location |
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Contributor |
Sponsor(s) |
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| 7. |
Date |
(YYYY-MM-DD) |
07-03-2011
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| 8. |
Type |
Status & genre |
Peer-reviewed Article |
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| 8. |
Type |
Type |
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| 9. |
Format |
File format |
PDF |
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| 10. |
Identifier |
Uniform Resource Identifier |
https://revues.imist.ma/index.php/MJCM/article/view/18 |
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| 11. |
Source |
Title; vol., no. (year) |
Moroccan Journal of Condensed Matter; Vol 1 (1998) |
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| 12. |
Language |
English=en |
en |
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| 13. |
Relation |
Supp. Files |
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Coverage |
Geo-spatial location, chronological period, research sample (gender, age, etc.) |
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| 15. |
Rights |
Copyright and permissions |
Copyright (c)
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