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This work deals with the modeling of experimental current-voltage (I-V) characteristics according to the temperature of P type Schottky diode in polymers. The results obtained show that conduction in the fabricated structures depends on temperature and bias the mode (forward or reverse).
Under reverse bias, current increases significantly with temperature. This is due to the thermoionic conduction, affected by the lowering of the potential barrier at the metal /polymer interface due to the image charge effect. The analysis of current-voltage characteristics has enabled us to derive the saturation current and, also, the potential barrier at the metal/polymer interface according to temperature. It has been shown that the value of this barrier without image charge effect, is in the order of 0. 3eV.
Under forward bias, current increases with temperature. It is of the thermoionic type at low voltage (-0.4 Volt<V< 0 Volt). It has been shown that the values of the ideality factor depend very little on temperature: varying from 1.5 to 4. However, saturation current increases with temperature: when temperature increases by approximately 6%, current increases by 20%. The values of saturation current for temperatures in excess of 200°K are confirmed by the values found in reverse bias. For temperatures less than 200°K, saturation currents in reverse mode are important relative to that obtained in forward mode. This is attributed to the electrical properties of polymer at low temperatures in reverse mode.
At high voltages (V<-0.4 Volt), the current is attributed to the resistance effect of polymer. This resistance is evidenced by the high current and drops with temperature. Its analysis has allowed us to derive the mobility of the carrier charges: when temperature varies from 105°K to 425°K, mobility varies from 3 10^-5(cm²V^-1S^-1) to 7 10^-5(cm²V^-1S^-1).