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Cr-based MOCVD layers as conducting diffusion barriers for copper metallization


 
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1. Title Title of document Cr-based MOCVD layers as conducting diffusion barriers for copper metallization
 
2. Creator Author's name, affiliation, country F. Maury; Centre Interuniversitaire de Recherche et d'Ingénierie des Matériaux, ENSIACET, 118 route de Narbonne, 31077 Toulouse cedex 4; France
 
2. Creator Author's name, affiliation, country F.D. Duminica; Centre Interuniversitaire de Recherche et d'Ingénierie des Matériaux, ENSIACET, 118 route de Narbonne, 31077 Toulouse cedex 4; France
 
2. Creator Author's name, affiliation, country C. Gasqueres; Centre Interuniversitaire de Recherche et d'Ingénierie des Matériaux, ENSIACET, 118 route de Narbonne, 31077 Toulouse cedex 4; France
 
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4. Description Abstract

Two types of amorphous Cr-based thin films, CrCxNy and CrSixCy, were grown by low pressure MOCVD on Si substrates using respectively Cr(NEt2)4 and Cr[CH2SiMe3]4 as single-source precursor in the low temperature range 400-420 °C and 475-500 °C. Their properties as conducting diffusion barrier against Cu were investigated and the results are discussed. CrSixCy exhibits a better thermal stability and a good Cu wettability but a high resistivity, which is detrimental for this application. CrCxNy has a low resistivity, a satisfactory stability up to 650 °C without undesirable interfacial reactions and an excellent conformality.
 
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7. Date (YYYY-MM-DD) 14-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/153
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 7 (2006)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)