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Electrical characterization of the junctions P+ N by C-V technique


 
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1. Title Title of document Electrical characterization of the junctions P+ N by C-V technique
 
2. Creator Author's name, affiliation, country H. Bouchenafa; Unit of Research Materials and Energies Renewable BP.119 – 13000-Tlemcen; Algeria
 
2. Creator Author's name, affiliation, country S. Rachedi; Unit of Research Materials and Energies Renewable BP.119 – 13000-Tlemcen; Algeria
 
2. Creator Author's name, affiliation, country D. Ghaffour; Unit of Research Materials and Energies Renewable BP.119 – 13000-Tlemcen; Algeria
 
2. Creator Author's name, affiliation, country S. Kerai; Unit of Research Materials and Energies Renewable BP.119 – 13000-Tlemcen; Algeria
 
2. Creator Author's name, affiliation, country K. Ghaffour; Unit of Research Materials and Energies Renewable BP.119 – 13000-Tlemcen; Algeria
 
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4. Description Abstract

Technique CV exploits measurement in mode of small signals for a relatively high frequency of the capacity of a junction metal-semi driver or a junction P+ NR (or PN+ polarized in reverse by a tension V R The experimental analysis of this technique makes it possible to determine some electric properties of the junctions P+ N or Schottky.

We describe here, the method used and we expose then the results obtained by this technique on diodes containing silicon (Si).
 
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7. Date (YYYY-MM-DD) 14-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/150
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 7 (2006)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)