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Atomic scale simulation of epitaxial growth: Cases of GaAs/GaAs and CdTe/GaAs


 
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1. Title Title of document Atomic scale simulation of epitaxial growth: Cases of GaAs/GaAs and CdTe/GaAs
 
2. Creator Author's name, affiliation, country M. Sahlaoui; Laboratoire de Physique des Matériaux, Faculté des Sciences et Techniques, B.P 523, 23000 Beni Mellal; Morocco
 
2. Creator Author's name, affiliation, country N. Fazouan; Laboratoire de Physique des Matériaux, Faculté des Sciences et Techniques, B.P 523, 23000 Beni Mellal; Morocco
 
2. Creator Author's name, affiliation, country M. Sajieddine; Laboratoire de Physique des Matériaux, Faculté des Sciences et Techniques, B.P 523, 23000 Beni Mellal; Morocco
 
2. Creator Author's name, affiliation, country M. Djafari Rouhani; Laboratoire de Physique des Solides, Université Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse Cedex Laboratoire d’Analyse et d’Architecture des Systèmes, 7 avenue du Colonel Roche, 31077 Toulouse Cedex; France
 
2. Creator Author's name, affiliation, country A. Esteve; Laboratoire d’Analyse et d’Architecture des Systèmes, 7 avenue du Colonel Roche, 31077 Toulouse Cedex; France
 
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4. Description Abstract We present a kinetic Monte Carlo model describing the growth by molecular beam epitaxy (MBE) of semiconductor compounds and including a local photoemission model with reflection high-energy electron diffraction (RHEED) intensity for comparison. We investigate the cases of both homoepitaxial and heteroepitaxial growth. The valence force field approximation is used for the strain energy calculations in mismatched thin films In homoepitaxial growth of GaAs, we have study the variations of photoemission current and RHEED intensity and examined the GaAs morphology. In high lattice mismatch heteroepitaxial growth (CdTe/GaAs), we have shown the formation of grooves corresponding to (111) facets, precursor to the formation of misfit defects.
 
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7. Date (YYYY-MM-DD) 11-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/144
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 6 (2005)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)