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PKP Metadata Items |
Metadata for this Document |
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| 1. |
Title |
Title of document |
Electroluminescence Characterization of Reverse Biased (In,Ga)N/(Al,Ga)N/GaN Systems Grown on SiC |
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| 2. |
Creator |
Author's name, affiliation, country |
Haddou EL Ghazi; LPS, Faculty of Sciences, Dhar El Mahraz, B.P 1796, Atlas-Fes
Special mathematics, CPGE Kénitra; Morocco |
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| 2. |
Creator |
Author's name, affiliation, country |
Anouar Jorio; LPS, Faculty of Sciences, Dhar El Mahraz, B.P 1796, Atlas-Fes; Morocco |
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| 2. |
Creator |
Author's name, affiliation, country |
Izeddine Zorkani; LPS, Faculty of Sciences, Dhar El Mahraz, B.P 1796, Atlas-Fes; Morocco |
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| 3. |
Subject |
Discipline(s) |
78.60.Fi; 78.67.De |
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| 3. |
Subject |
Keyword(s) |
Electroluminescence, Heterostructure, Temperature effect. |
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| 4. |
Description |
Abstract |
Optical characterization of grown on silicon carbide () is reported in this work. Room temperature electroluminescence (EL) was obtained for reverse bias () at (Blue luminescence) and at . At low temperature the yellow luminescence (YL) peaked at is also observed. The BL band is mostly given by electron-hole recombination in layer corresponding to the indium concentration equal to (theoretically) and (experimentally). The YL is more consistent with oxygen implication and can be explained by donor-acceptor (DAP) transition in which the complex is involved. |
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Publisher |
Organizing agency, location |
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Contributor |
Sponsor(s) |
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| 7. |
Date |
(YYYY-MM-DD) |
02-06-2013
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Type |
Status & genre |
Peer-reviewed Article |
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Type |
Type |
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| 9. |
Format |
File format |
PDF |
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| 10. |
Identifier |
Uniform Resource Identifier |
https://revues.imist.ma/index.php/MJCM/article/view/1302 |
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| 11. |
Source |
Title; vol., no. (year) |
Moroccan Journal of Condensed Matter; Vol 15, No 1 (2013) |
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| 12. |
Language |
English=en |
en |
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| 13. |
Relation |
Supp. Files |
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| 14. |
Coverage |
Geo-spatial location, chronological period, research sample (gender, age, etc.) |
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| 15. |
Rights |
Copyright and permissions |
Copyright (c)
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