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Combination of theoretical analysis and FTIR to study the photocurrent oscillation of Silicon in fluoride media


 
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1. Title Title of document Combination of theoretical analysis and FTIR to study the photocurrent oscillation of Silicon in fluoride media
 
2. Creator Author's name, affiliation, country F. Yahyaoui; Département de Physique - LPMC - Faculté des Sciences, B.P 133, 14000, Kénitra; Morocco
 
2. Creator Author's name, affiliation, country L. Hlou; Département de Physique - LTNPSA - Faculté des Sciences B.P 133, 14000, Kénitra; Morocco
 
2. Creator Author's name, affiliation, country M. Aggour; Département de Physique - LPMC - Faculté des Sciences, B.P 133, 14000, Kénitra; Morocco
 
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4. Description Abstract To deepening our knowledge of the behaviour of the silicon/electrolyte interface, a study of photocurrent oscillations on silicon in fluoride concentration c F =0.033 M is realized, and as a confirmation of the result the investigation is extrapolated to a variety of electrolyte compositions. The etch rates of anodic oxides in diluted fluoride solutions have been determined by using a new approach of the analysis of anodic current oscillations. The time dependent thickness of the anodic oxide has been measured by in-situ FTIR and can be simulated considering only the time dependent current and the etch rate.
 
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7. Date (YYYY-MM-DD) 10-03-2011
 
8. Type Status & genre Peer-reviewed Article
 
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9. Format File format PDF
 
10. Identifier Uniform Resource Identifier https://revues.imist.ma/index.php/MJCM/article/view/101
 
11. Source Title; vol., no. (year) Moroccan Journal of Condensed Matter; Vol 5, No 1 (2004)
 
12. Language English=en en
 
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15. Rights Copyright and permissions Copyright (c)