TEM study of GaN/AlN quantum dots deposited on vicinal silicon
BENAISSA, M.; VENNÉGUÈS, P.; SEMOND, F..
TEM study of GaN/AlN quantum dots deposited on vicinal silicon.
Moroccan Journal of Condensed Matter, [S.l.], v. 11, n. 2, mar. 2011.
ISSN 1114-2073. Available at: <https://revues.imist.ma/index.php/MJCM/article/view/226/224>. Date accessed: 15 nov. 2023.