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TEM study of GaN/AlN quantum dots deposited on vicinal silicon

  
BENAISSA, M.; VENNÉGUÈS, P.; SEMOND, F.. TEM study of GaN/AlN quantum dots deposited on vicinal silicon. Moroccan Journal of Condensed Matter, [S.l.], v. 11, n. 2, mar. 2011. ISSN 1114-2073. Available at: <https://revues.imist.ma/index.php/MJCM/article/view/226>. Date accessed: 15 nov. 2023.