Study of Au/n- ZnSe contact by ballistic electron emission microscopy

Abstract

Ballistic Electron Emission Microscopy (BEEM) has been used to characterise the Au/n-ZnSe contact. A mean statistical BEEM threshold of 1.63eV is in good agreement with literature. Metal - Insulator- Semiconductor (MIS) structures are invoked to explain the Schottky barrier height dispersion and the observed shift of BEEM thresholds to higher values.