MOCVD growth of Bi2Te3-Sb2Te3 layers : Effect of growth parameters on the electrical and thermoelectrical properties

B. Aboulfarah, D. Sayah, A. Mzerd, A. Giani, A. Boyer


The growth of (Bi1-xSbx)2Te3 thin films by metal-organic chemical vapour deposition (MOCVD) using trimethylbismuth, triethylantimony and diethyltellurium as bismuth, antimony and tellurium sources respectively is investigated on pyrex substrates. The electrical and thermoelectrical properties of this material are also measured over the growth temperature range 360-470°C. The studies are also made on the effect of VI/V ratio on these properties in the variation range 2-9. Polycrystalline structure is confirmed by X-ray diffraction, and it is observed that the intensity of the preferred orientation is higher at 450°C. The measurement of Seebeck coefficient shows that all samples have p-type conduction. The best value of this parameter is obtained for high growth temperature (240µV/K). The good result obtained for (Bi1-xSbx)2Te3 thin films revealed the great potential of MOCVD method which is an industrial technique to produce good materials for device applications (sensors and thermopiles).

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