The Carbon implication in p-n junction’s gallium arsenide electroluminescence
Abstract
In this paper, electroluminescence (EL) characteristic study of gallium arsenide junction is reported. The spectral range for which EL spectra were recorded is . Three main structures noted , and , located respectively at and are shown on the spectra. The phonon replica of is shown and other sequence of transitions separated approximately by is also observed. The electron-phonon coupling strength as well as the Franck-Condon shift of ( and are extracted from the configuration coordinate model and temperature–dependence of linewidths and EL intensity. The and structures are due respectively to shallow donor-acceptor pair and its phonon replica related to .
Keywords
GaAs LED, Electroluminescence, Temperature effect