The Carbon implication in p-n junction’s gallium arsenide electroluminescence

Haddou EL Ghazi, Izeddine Zorkani, Anouar Jorio

Abstract


In this paper, electroluminescence (EL) characteristic study of gallium arsenide junction is reported. The spectral range for which EL spectra were recorded is . Three main structures noted ,  and , located respectively at   and  are shown on the spectra. The phonon replica of  is shown and other sequence of transitions separated approximately by   is also observed. The electron-phonon coupling strength as well as the Franck-Condon shift of ( and  are extracted from the configuration coordinate model and temperature–dependence of linewidths and EL intensity. The  and  structures are due respectively to shallow donor-acceptor pair  and its phonon replica related to .


Keywords


GaAs LED, Electroluminescence, Temperature effect

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