Electronic properties in heterostructures

Abstract

Using the interface response, the effect of internal surface of Single Quantum Well (SQW) and of Superlattice (SL) (Substrate / Single Quantum Well and of Substrate / Superlattice interfaces) are studied in term of changing the heterostructures parameters and keeping constant the parameters of substrate. Surface and interface considered as well as planar defects are associated with the states which are localised in mini gaps (MG). Electronic properties are touched in this way and their investigation is made by band structures and variational density of states (DOS).