GROWTH OF SILICON BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE: APPLICATION TO THIN FILM SOLAR CELLS

Abstract

Growth of silicon thin layer by Liquid Phase Epitaxy (LPE) at low temperature (800 °C) can be an attractive technique to fabricate low cost photovoltaic cells. Using a two baths technique, one can remove native oxide and then obtain homogeneous layers presenting a p/p+ structure. Short circuit current of 19 mA/cm² and conversion efficiency of 4.7% are obtained with 12 µm thick layer.