The impurity photoionization cross-section in the bulk and low dimensional electronic systems

Abstract

The effects of a strong magnetic field, a weak electric field, the central-cell correction. the electron mass anisotropy and the electron-phonon interaction on the dependence of the photoionization cross-section on photon energy of a shallow donor impurity are investigated with the use of a variational method in the bulk case. In the low dimensional systems such as quantum well and quantum-well wires, we have studied the effect of electron-phonon interaction on the binding energy and the impurity photoionization cross-section. We have also shown that the photoionization cross-sections are affected by the sizes of the wire and the height of the barrier in finite quantum-well wires.