Electroluminescence Characterization of Reverse Biased (In,Ga)N/(Al,Ga)N/GaN Systems Grown on SiC

Abstract

Optical characterization of  grown on silicon carbide () is reported in this work. Room temperature electroluminescence (EL) was obtained for reverse bias () at  (Blue luminescence) and at . At low temperature the yellow luminescence (YL) peaked at  is also observed. The BL band is mostly given by electron-hole recombination in  layer corresponding to the indium concentration equal to  (theoretically) and  (experimentally). The YL is more consistent with oxygen implication and can be explained by donor-acceptor (DAP) transition in which the complex  is involved.