ONE STEP ELECTRODEPOSITION OF CuInSe2 THIN FILMS

Abstract

Formation of CuInSe₂ (CIS) thin films from aqueous solution containing citrate as complexing agent is reported. The surface morphology and the composition of the deposited films are characterized by scanning electron microscopy (SEM). The texture of the deposits and their compositions are analyzed by X-ray diffraction and transmission electron microscopy (TEM). Annealing of the films at 350°C in flowing argon electrodeposited at potentials in the range [-0.24, -0.4 (V vs Ag/AgCl)] resulted in the formation of alpha-Cu 2 Se (JCPDS 24-1131) and CuSe (JCPDS 6-0427). On the contrary, annealing in the same conditions of the films electrodeposited between -0.4 and -0.6 V vs Ag/AgCl led to the formation of chalcopyrite CuInSe 2 (JCPDS 23-209) with alpha-Cu 2 Se (JCPDS 24-1131) as secondary phase. The formation of CuInSe 2 films with a chalcopyrite structure and good stoichiometry is observed.