Combination of theoretical analysis and FTIR to study the photocurrent oscillation of Silicon in fluoride media

Abstract

To deepening our knowledge of the behaviour of the silicon/electrolyte interface, a study of photocurrent oscillations on silicon in fluoride concentration c F =0.033 M is realized, and as a confirmation of the result the investigation is extrapolated to a variety of electrolyte compositions. The etch rates of anodic oxides in diluted fluoride solutions have been determined by using a new approach of the analysis of anodic current oscillations. The time dependent thickness of the anodic oxide has been measured by in-situ FTIR and can be simulated considering only the time dependent current and the etch rate.